http://www.microsemi.com 053-4074 rev a 8-2013 product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery time ? soft recovery characteristics ? popular to-247 package ? low forward voltage ? low leakage current ? avalanche energy rated product applications ? anti-parallel diode -switchmode power supply -inverters ? free wheeling diode -motor controllers -converters -inverters ? snubber diode ? pfc ? rohs compliant ultrafast soft recovery rectifier diode *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings per diode: t c = 25c unless otherwise speciied. static electrical characteristics apt15dq120bhb apt15dq120bhb(g) 1200v 2x15a 1 - cathode 1 2 - anode 1 cathode 2 3 - anode 2 2 3 1 t o -247 1 2 3 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should b e followed. symbol parameter ratings unit v r maximum d.c. reverse voltage 1200 v v rrm maximum peak repetitive reverse voltage v rwm maximum working peak reverse voltage i f(av) maximum average forward current (t c = 74c, duty cycle = 0.5) 15 a i f(rms) rms forward current (square wave, 50% duty) 17 i fsm non-repetitive forward surge current (t j = 45c, 8.3ms) 110 e avl avalanche energy (1a, 40mh) 20 mj t j ,t stg operating and storagetemperature range -55 to 175 c t l lead temperature for 10 sec. 300 symbol parameter min typ max unit v f forward voltage i f = 15a 3.0 3.5 v i f = 30a 3.7 i f = 15a, t j = 125c 2.2 i rm maximum reverse leakage current v r = 1200v 100 a v r = 1200v, t j = 125c 500 c t junction capacitance, v r = 200v v r = 200v 17 downloaded from: http:///
0 0.5 1.0 1.5 2.0 2.5 10 -4 10 -3 10 -2 0.1 1 10 -5 apt15dq120bhb(g) dynamic characteristics thermal and mechanical characteristics microsemi reserves the right to change, without notice, the speciications and information contained herein. rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : z jc , thermal impedance (c/w) 053-4074 rev a 8-2013 symbol parameter test conditions min typ max unit t rr reverse recovery time i f = 1a, di f /dt = -100a/ s v r = 30v, t j = 25 c 21 ns t rr reverse recovery time i f = 15a, di f /dt = -200a/ s v r = 800v, t c = 25 c 240 q rr reverse recovery charge 260 nc i rrm reverse recovery current 3 amps t rr reverse recovery time i f = 15a, di f /dt = -200a/ s v r = 800v, t c = 125 c 290 ns q rr reverse recovery charge 960 nc i rrm reverse recovery current 6 amps t rr reverse recovery time i f = 15a, di f /dt = -1000a/ s v r = 800v, t c = 125 c 130 ns q rr reverse recovery charge 1340 nc i rrm maximum reverse recovery current 19 amps symbol parameter min typ max unit r jc reverse recovery time 2.3 c/w w t package weight 0.22 oz 5.9 g torque maximum mounting torque 10 lb?in 1.1 n?m 0.3 d = 0.9 0.7 single pulse 0.5 0.1 0.05 downloaded from: http:///
053-4074 rev a 8-2013 apt15dq120bhb(g) 0 5 10 15 20 25 30 35 25 50 75 100 125 150 175 0 10 20 30 40 50 60 0 1 2 3 4 5 typical performance curves 400350 300 250 200 150 100 50 0 2520 15 10 50 duty cycle = 0.5 0 25 50 75 100 125 150 1 10 100 200 1.21.0 0.8 0.6 0.4 0.2 0.0 8070 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic paramete rs (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of change q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 t j = 125 c v r = 800v 7.5a 15a 30a t j = 125 c v r = 800v 30a 7.5a 15a 25002000 1500 1000 500 0 t j = 125 c v r = 800v 30a 15a 7.5a t rr q rr q rr t rr i rrm downloaded from: http:///
apt15dq120bhb(g) 053-4074 rev a 8-2013 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max . 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 3.55 (.140) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) anode 1 / cathode 2 anode 2 cathode 1 anode 1 / cathode 2 2-plcs. e1 sac: tin, silver, copper dynamic characteristics t j = 25c unless otherwise speciied 4 3 1 2 5 zer o 0.25 i rr m pearson 2878 current transformer di f /d t adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform figure 10. diode reverse recovery waveform deinition figure 9. diode test circuit i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve deined by i rrm and t rr. 5 1 2 3 4 to-247 package outline 1.016 (.040) dimensions in millimeters and (inches) downloaded from: http:///
053-4074 rev a 8-2013 apt15dq120bhb(g) the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted , distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information co ntained herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by mi crosemi in writing signed by an oficer of microsemi. microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or imp lied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purp ose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any u ser or customers inal application. user or customer shall not rely on any data and performance speciications or parameters provided by micro semi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verif y the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such i nformation is entirely with the user. mi - crosemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.micro semi.com/legal/tnc.asp downloaded from: http:///
|
